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| 5 mm (T1 3/4) LED, Non Diffused Super-Bright LED LS 5421, LO 5411, LY 5421, LG 5411 Besondere Merkmale * Gehausetyp: klares 5 mm (T1 3/4) Gehause, eingefarbt (super-rot und gelb), nicht eingefarbt (orange und grun) * Besonderheit des Bauteils: enge Abstrahlcharakteristik * Wellenlange: 628 nm (super-rot), 590 nm (gelb), 570 nm (grun) * Abstrahlwinkel: engwinklig (20) * Technologie: GaAlP * optischer Wirkungsgrad: 1,5 lm/W (super-rot, orange, gelb), 2,5 lm/W (grun) * Gruppierungsparameter: Lichtstarke * Lotmethode: Wellenloten (TTW) * Verpackung: Schuttgut, gegurtet lieferbar Anwendungen * optischer Indikator * Hinterleuchtung (LCD, Schalter, Tasten, Displays, Werbebeleuchtung, Allgemeinbeleuchtung) * Innenbeleuchtung im Automobilbereich (z.B. Tastenhinterleuchtung, u.a.) * Ersatz von Kleinst-Gluhlampen Features * package: clear 5 mm (T1 3/4) package, colored (super-red and yellow), colorless (orange and green) * feature of the device: narrow viewing angle * wavelength: 628 nm (super-red), 590 nm (yellow), 570 nm (green) * viewing angle: narrow (20) * technology: GaAlP * optical efficiency: 1.5 lm/W (super-red, orange, yellow), 2.5 lm/W (green) * grouping parameter: luminous intensity * soldering methods: TTW soldering * packing: bulk, available taped on reel Applications * optical indicators * backlighting (LCD, switches, keys, displays, illuminated advertising, general lighting) * interior automotive lighting. (e.g. key backlighting, etc.) * substitution of micro incandescent lamps 2000-03-01 1 OPTO SEMICONDUCTORS LS 5421, LO 5411, LY 5421, LG 5411 Typ Type Emissionsfarbe Color of Emission Gehausefarbe Color of Package Lichtstarke Luminous Intensity IF = 10 mA IV (mcd) 28 ... 71 ... 112 ... 180 ... 71 ... 71 ... 112 ... 180 ... 280 ... 112 ... 28 ... 71 ... 112 ... 180 ... 71 ... 28 ... 71 ... 112 ... 180 ... 71 ... 180 112 180 280 450 450 180 280 450 710 180 112 180 280 450 180 112 180 280 450 Lichtstrom Luminous Flux IF = 10 mA V (mlm) 20 (typ.) 20 (typ.) 30 (typ.) 50 (typ.) 60 (typ.) 70 (typ.) 20 (typ.) 30 (typ.) 50 (typ.) 60 (typ.) 20 (typ.) 20 (typ.) 30 (typ.) 50 (typ.) 60 (typ.) 20 (typ.) 20 (typ.) 30 (typ.) 50 (typ.) 60 (typ.) Bestellnummer Ordering Code LS 5421-NR LS 5421-Q LS 5421-R LS 5421-S LS 5421-QT LO 5411-QT LO 5411-R LO 5411-S LO 5411-T LO 5411-RU LY 5421-NR LY 5421-Q LY 5421-R LY 5421-S LY 5421-QT LG 5411-NR LG 5411-Q LG 5411-R LG 5411-S LG 5411-QT super-red red clear Q62703-Q1994 Q62703-Q1442 Q62703-Q1738 Q62703-Q2405 Q62703-Q1995 Q62703-Q3928 Q62703-Q3929 Q62703-Q3930 Q62703-Q3931 Q62703-Q3932 Q62703-Q1444 Q62703-Q1446 Q62703-Q2005 Q62703-Q2632 Q62703-Q1447 Q62703-Q2023 Q62703-Q1739 Q62703-Q1451 Q62703-Q2321 Q62703-Q2024 orange colorless clear yellow yellow clear green colorless clear Helligkeitswerte werden mit einer Stromeinpragedauer von 25 ms und einer Genauigkeit von 11 % ermittelt. Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. 2000-03-01 2 OPTO SEMICONDUCTORS LS 5421, LO 5411, LY 5421, LG 5411 Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Leistungsaufnahme Power dissipation TA 25 C Symbol Symbol Wert Value - 55 ... + 100 - 55 ... + 100 + 100 40 0.5 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 5 130 V mW Warmewiderstand Thermal resistance Rth JA Sperrschicht/Umgebung Junction/ambient Rth JS Sperrschicht/Lotpad Junction/solder point Montage auf PC-Board FR 4 (Padgroe 16 mm 2) mounted on PC board FR 4 (pad size 16 mm 2) Minimale Beinchenlange Minimum lead length 400 180 K/W K/W 2000-03-01 3 OPTO SEMICONDUCTORS LS 5421, LO 5411, LY 5421, LG 5411 Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 10 mA Dominantwellenlange Dominant wavelength IF = 10 mA Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 10 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 10 mA Sperrstrom Reverse current VR = 5 V Temperaturkoeffizient von peak Temperature coefficient of peak IF = 10 mA Temperaturkoeffizient von dom Temperature coefficient of dom IF = 10 mA Temperaturkoeffizient von VF Temperature coefficient of VF IF = 10 mA Optischer Wirkungsgrad Optical efficiency IF = 10 mA (typ.) Symbol Symbol LS Werte Values LO 610 LY 586 LG 565 nm 635 Einheit Unit peak dom (typ.) 628 605 590 570 nm (typ.) 45 40 45 25 nm (typ.) (typ.) (max.) (typ.) (max.) (typ.) 2 20 2.0 2.6 0.01 10 0.11 20 2.0 2.6 0.01 10 0.12 20 2.0 2.6 0.01 10 0.10 20 2.0 2.6 0.01 10 0.11 Grad deg. V V VF VF IR IR TCpeak A A nm/K (typ.) TCdom 0.07 0.07 0.07 0.07 nm/K (typ.) TCV opt - 1.9 - 1.9 - 1.9 - 1.4 mV/K (typ.) 1.5 1.5 1.5 2.5 lm/W 2000-03-01 4 OPTO SEMICONDUCTORS LS 5421, LO 5411, LY 5421, LG 5411 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 10 mA Relative Spectral Emission V() = spektrale Augenempfindlichkeit Standard eye response curve 100 OHL01102 I rel % 80 V 60 orange 20 0 400 450 500 550 yellow green 40 600 super-red 650 nm 700 Abstrahlcharakteristik Irel = f () Radiation Characteristic 40 30 20 10 0 1.0 OHL01642 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 2000-03-01 0 0.8 0.6 0.4 0 5 20 40 60 80 100 120 OPTO SEMICONDUCTORS LS 5421, LO 5411, LY 5421, LG 5411 Durchlastrom IF = f (VF) Forward Current TA = 25 C 10 2 OHL01263 Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative Luminous Intensity TA = 25 C 10 1 OHL02357 I F mA IV I V(10 mA) 10 0 10 1 5 5 10 -1 5 10 0 5 10 -2 5 green yellow super-red orange 5 10 0 5 10 1 mA 10 2 10 -1 1 1.4 1.8 2.2 2.6 3 V 3.4 10 -3 10 -1 VF IF Maximal zulassiger Durchlastrom IF = f (T) Max. Permissible Forward Current 50 OHL01092 Relative Lichtstarke IV / IV(25 C)= f (TA) Relative Luminous Intensity IF = 10 mA 2.0 OHL01149 I F mA 40 IV I V (25 C) 1.6 TA 30 TS 1.2 yellow green 20 0.8 orange super-red 10 0.4 TA temp. ambient TS temp. solder point 0 0 0 20 40 60 80 C 100 0 20 40 60 80 C 100 T 2000-03-01 6 TA OPTO SEMICONDUCTORS LS 5421, LO 5411, LY 5421, LG 5411 Zulassige Impulsbelastbarkeit IF = f (tp) Permissible Pulse Handling Capability Duty cycle D = parameter, TA = 25 C 10 4 OHL01162 I F mA tP t D= P T IF T 10 3 5 0.1 0.2 10 2 0.5 5 DC D= 0.005 0.01 0.02 0.05 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp 2000-03-01 7 OPTO SEMICONDUCTORS LS 5421, LO 5411, LY 5421, LG 5411 Mazeichnung Package Outlines Area not flat 0.6 (0.024) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) 7.8 (0.307) 7.5 (0.295) 5.9 (0.232) 5.5 (0.217) 2.54 (0.100) spacing o5.1 (0.201) Cathode 1.2 (0.047) 29.0 (1.142) 27.0 (1.063) o4.8 (0.189) 1.8 (0.071) 9.0 (0.354) 8.2 (0.323) 0.6 (0.024) 0.4 (0.016) GEXY6713 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Kathodenkennung: kurzerer Lotspie Cathode mark: short solder lead Gewicht / Approx. weight: 0.35 g 2000-03-01 8 OPTO SEMICONDUCTORS LS 5421, LO 5411, LY 5421, LG 5411 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) 300 C OHLY0598 10 s 235 C ... 260 C 2. Welle 2. wave Normalkurve standard curve Grenzkurven limit curves T 250 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling ca 200 K/s 5 K/s 2 K/s 0 0 50 100 150 200 s 250 t Empfohlenes Lotpaddesign Recommended Solder Pad Wellenloten (TTW) TTW Soldering 4 OHLP0985 2000-03-01 4.8 9 OPTO SEMICONDUCTORS |
Price & Availability of LO5411-R
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